Power Electronics is the branch of electrical and electronics engineering that deals in processing and controlling electrical energy required by the load.
An insulated gate bipolar transistor (IGBT) is a semiconductor structure of alternate layers of p-type and n-type doping. With the combination of an easily driven MOS gate and low conduction loss,
IGBT standards for Insulated Gate Bipolar Transistor. It is another development in the power electronics field also called COMFET (conductivity modulated field-effect transistor), IGT (insulated gate transistor), GEMFET, or bipolar MOSFET. IGBT combines the properties of BJT (bipolar junction transistor)
To fire the SCR, a short-time current pulse at its gate is to be applied. The delay of firing and controlling the instant at which the pulse occurs within each half cycle is to be provided by the firing circuit.
All thyristors will have their own capability and they must be operated in their definite capability limits known as ratings. If a thyristor is
The circuit used for turning ON the thyristor by giving gate pulses is called the Firing or Triggering Circuit of SCR.
The chopper circuit employing the load commutation technique is known as the load commutation chopper. The load commutation technique is, falling
The process of conversion of ac power into dc power is called Rectification. The device used for the rectification process is called Rectifiers.